A new generation of pixel ionizing radiation detectors is emerging and is going to play a major role in the high luminosity upgrade of the CMS experiment at LHC. These detectors feature columnar implantations, reaching deep in the silicon substrate. They are much more radiation resistant than traditional planar pixels. The electric field is parallel to the surface of a 3D sensor, so the charge carriers produced by the passage of a ionizing particle move orthogonally to the active depth of the silicon. The distance between electrodes is smaller than the active depth, so the bias voltage needed to fully deplete a 3D sensor from the majority carriers is low (compared to a planar sensor), and allows to operate these detectors even after high levels of radiation.
The student will engage in the CMS group activities in the study and charachterization of the 3D pixel sensors. He will also engage in the activities related to the integration of these sensor in the tracker and in the study and development of their readout and powering infrastructure.
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